STD6N65M2

Part Number
STD6N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 4A DPAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Power Dissipation (Max) 60W (Tc)
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds 226 pF @ 100 V

Goods in stock:3332

Can be shipped immediately
quantity unit price price
1 USD $1.46 USD $1.46
Total Amount: USD $1.46

Cut Tape (CT)

quantity unit price price
1 $1.46 $1.46
10 $1 $10
100 $0.69 $69
500 $0.54 $270
1000 $0.49 $490