STD2HNK60Z-1

Part Number
STD2HNK60Z-1
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 2A IPAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc)
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 45W (Tc)
Vgs (Max) ±30V
Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
Input Capacitance (Ciss) (Max) @ Vds 280 pF @ 25 V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Supplier Device Package TO-251 (IPAK)
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1A, 10V

Goods in stock:4040

Can be shipped immediately
quantity unit price price
1 USD $0.65 USD $0.65
Total Amount: USD $0.65

Tube

quantity unit price price
1 $0.65 $0.65
75 $0.63 $47.25
150 $0.62 $93
525 $0.6 $315
1050 $0.55 $577.5
2025 $0.55 $1113.75
5025 $0.49 $2462.25