STD12N65M2

Part Number
STD12N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 8A DPAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Supplier Device Package DPAK
Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs 500mOhm @ 4A, 10V
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 85W (Tc)
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 100 V

Goods in stock:2827

Can be shipped immediately
quantity unit price price
1 USD $2.00 USD $2.00
Total Amount: USD $2.00

Cut Tape (CT)

quantity unit price price
1 $2 $2
10 $1.53 $15.3
100 $1.05 $105
500 $0.83 $415
1000 $0.8 $800