STB7NK80Z-1

Part Number
STB7NK80Z-1
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 800V 5.2A I2PAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Power Dissipation (Max) 125W (Tc)
Current - Continuous Drain (Id) @ 25°C 5.2A (Tc)
Drain to Source Voltage (Vdss) 800 V
Vgs (Max) ±30V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Vgs(th) (Max) @ Id 4.5V @ 100µA
Rds On (Max) @ Id, Vgs 1.8Ohm @ 2.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1138 pF @ 25 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1000 USD $1.70 USD $1,700.00
Total Amount: USD $1,700.00

Tube

quantity unit price price
1000 $1.7 $1700