STB50N65DM6

Part Number
STB50N65DM6
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 33A D2PAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs (Max) ±25V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 250W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 2300 pF @ 100 V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Rds On (Max) @ Id, Vgs 91mOhm @ 16.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 52.5 nC @ 10 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1000 USD $3.92 USD $3,920.00
Total Amount: USD $3,920.00

Tape & Reel (TR)

quantity unit price price
1000 $3.92 $3920