STB4NK60Z-1

Part Number
STB4NK60Z-1
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 4A I2PAK
Specification document Datasheet

Product attributes

Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Part Status Not For New Designs
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
Vgs (Max) ±30V
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Power Dissipation (Max) 70W (Tc)
Vgs(th) (Max) @ Id 4.5V @ 50µA
Rds On (Max) @ Id, Vgs 2Ohm @ 2A, 10V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
2000 USD $0.45 USD $900.00
Total Amount: USD $900.00

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quantity unit price price
2000 $0.45 $900