STB3N62K3

Part Number
STB3N62K3
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 620V 2.7A D2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 2.7A (Tc)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Power Dissipation (Max) 45W (Tc)
Vgs (Max) ±30V
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs(th) (Max) @ Id 4.5V @ 50µA
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V
Drain to Source Voltage (Vdss) 620 V
Input Capacitance (Ciss) (Max) @ Vds 385 pF @ 25 V

Goods in stock:1600

Can be shipped immediately