STB35N65DM2

Part Number
STB35N65DM2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 28A D2PAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 28A (Tc)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs (Max) ±25V
Supplier Device Package D2PAK
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
Power Dissipation (Max) 210W (Tc)
Input Capacitance (Ciss) (Max) @ Vds 2400 pF @ 100 V
Rds On (Max) @ Id, Vgs 110mOhm @ 14A, 10V

Goods in stock:1971

Can be shipped immediately
quantity unit price price
1 USD $5.51 USD $5.51
Total Amount: USD $5.51

Cut Tape (CT)

quantity unit price price
1 $5.51 $5.51
10 $2.94 $29.4
100 $2.85 $285