STB33N65M2

Part Number
STB33N65M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 24A D2PAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Power Dissipation (Max) 190W (Tc)
Operating Temperature 150°C (TJ)
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 41.5 nC @ 10 V
Rds On (Max) @ Id, Vgs 140mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1790 pF @ 100 V

Goods in stock:2161

Can be shipped immediately
quantity unit price price
1 USD $5.56 USD $5.56
Total Amount: USD $5.56

Cut Tape (CT)

quantity unit price price
1 $5.56 $5.56
10 $3.69 $36.9
100 $2.63 $263
500 $2.5 $1250