STB30N65M2AG

Part Number
STB30N65M2AG
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 650V 20A D2PAK
Specification document Datasheet

Product attributes

Part Status Last Time Buy
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Power Dissipation (Max) 190W (Tc)
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs (Max) ±25V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 30.8 nC @ 10 V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1440 pF @ 100 V

Goods in stock:1801

Can be shipped immediately
quantity unit price price
1 USD $5.67 USD $5.67
Total Amount: USD $5.67

Cut Tape (CT)

quantity unit price price
1 $5.67 $5.67
10 $3.76 $37.6
100 $2.69 $269
500 $2.56 $1280