STB21NM50N-1

Part Number
STB21NM50N-1
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 500V 18A I2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Drain to Source Voltage (Vdss) 500 V
Operating Temperature 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Vgs (Max) ±25V
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Power Dissipation (Max) 140W (Tc)
Supplier Device Package I2PAK
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
Rds On (Max) @ Id, Vgs 190mOhm @ 9A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 25 V

Goods in stock:1600

Can be shipped immediately