STB18NM60ND

Part Number
STB18NM60ND
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 13A D2PAK
Specification document Datasheet

Product attributes

Part Status Obsolete
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Vgs (Max) ±25V
Power Dissipation (Max) 110W (Tc)
Vgs(th) (Max) @ Id 5V @ 250µA
Rds On (Max) @ Id, Vgs 290mOhm @ 6.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1030 pF @ 50 V

Goods in stock:1600

Can be shipped immediately