STB18N60M2

Part Number
STB18N60M2
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 13A D2PAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Vgs (Max) ±25V
Supplier Device Package D2PAK
Power Dissipation (Max) 110W (Tc)
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 791 pF @ 100 V

Goods in stock:3259

Can be shipped immediately
quantity unit price price
1 USD $2.94 USD $2.94
Total Amount: USD $2.94

Cut Tape (CT)

quantity unit price price
1 $2.94 $2.94
10 $2.19 $21.9
100 $1.54 $154
500 $1.28 $640