STB13NM60N

Part Number
STB13NM60N
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 11A D2PAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Operating Temperature 150°C (TJ)
Drain to Source Voltage (Vdss) 600 V
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±25V
Supplier Device Package D2PAK
Power Dissipation (Max) 90W (Tc)
Rds On (Max) @ Id, Vgs 360mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 790 pF @ 50 V

Goods in stock:2510

Can be shipped immediately
quantity unit price price
1 USD $6.52 USD $6.52
Total Amount: USD $6.52

Cut Tape (CT)

quantity unit price price
1 $6.52 $6.52
10 $4.37 $43.7
100 $3.15 $315
500 $3.1 $1550