STB11NM60FDT4

Part Number
STB11NM60FDT4
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N-CH 600V 11A D2PAK
Specification document

Product attributes

Part Status Obsolete
Mounting Type Surface Mount
Operating Temperature -
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drain to Source Voltage (Vdss) 600 V
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Supplier Device Package D2PAK
Power Dissipation (Max) 160W (Tc)
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 25 V
Vgs(th) (Max) @ Id 5V @ 250µA
Rds On (Max) @ Id, Vgs 450mOhm @ 5.5A, 10V

Goods in stock:1600

Can be shipped immediately