STB11NM60-1
| Part Number |
STB11NM60-1
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | MOSFET N-CH 650V 11A I2PAK |
| Specification document | Datasheet |
Product attributes
| Part Status | Obsolete | |
|---|---|---|
| Mounting Type | Through Hole | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) | |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
| Power Dissipation (Max) | 160W (Tc) | |
| Vgs (Max) | ±30V | |
| Supplier Device Package | I2PAK | |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V | |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
Goods in stock:1600
Can be shipped immediately
