STB11N65M5

Part Number
STB11N65M5
Manufacturer STMicroelectronics
Other part numbers
Description MOSFET N CH 650V 9A D2PAK
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
Grade -
Qualification -
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Operating Temperature 150°C (TJ)
Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Vgs (Max) ±25V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drain to Source Voltage (Vdss) 650 V
Vgs(th) (Max) @ Id 5V @ 250µA
Power Dissipation (Max) 85W (Tc)
Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 100 V

Goods in stock:4336

Can be shipped immediately
quantity unit price price
1 USD $2.89 USD $2.89
Total Amount: USD $2.89

Cut Tape (CT)

quantity unit price price
1 $2.89 $2.89
10 $2.1 $21
100 $1.49 $149
500 $1.2 $600