SDT10S30
| Part Number |
SDT10S30
|
|---|---|
| Manufacturer | Infineon Technologies |
| Other part numbers | |
| Description | DIODE SIL CARB 300V 10A PGTO2202 |
| Specification document | Datasheet |
Product attributes
| Part Status | Obsolete | |
|---|---|---|
| Mounting Type | Through Hole | |
| Voltage - DC Reverse (Vr) (Max) | 300 V | |
| Package / Case | TO-220-2 | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Current - Average Rectified (Io) | 10A | |
| Technology | SiC (Silicon Carbide) Schottky | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A | |
| Current - Reverse Leakage @ Vr | 200 µA @ 300 V | |
| Supplier Device Package | PG-TO220-2-2 | |
| Capacitance @ Vr, F | 600pF @ 0V, 1MHz |
Goods in stock:1600
Can be shipped immediately
