SCTWA90N65G2V-4
| Part Number |
SCTWA90N65G2V-4
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | TRANS SJT N-CH 650V 119A HIP247 |
| Specification document | Datasheet |
Product attributes
| Mounting Type | Through Hole | |
|---|---|---|
| Part Status | Active | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Package / Case | TO-247-3 | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Power Dissipation (Max) | 565W (Tc) | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | HiP247™ Long Leads | |
| Current - Continuous Drain (Id) @ 25°C | 119A (Tc) | |
| Vgs (Max) | +22V, -10V | |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V | |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 50A, 18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V |
Goods in stock:1600
Can be shipped immediately
Tube
| quantity | unit price | price |
|---|---|---|
| 1 | $34.21 | $34.21 |
| 30 | $25.25 | $757.5 |
| 120 | $24.16 | $2899.2 |
