SCTWA60N120G2-4
| Part Number |
SCTWA60N120G2-4
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SILICON CARBIDE POWER MOSFET 120 |
| Specification document | Datasheet |
Product attributes
| Mounting Type | Through Hole | |
|---|---|---|
| Part Status | Active | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Package / Case | TO-247-4 | |
| Technology | SiCFET (Silicon Carbide) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Supplier Device Package | TO-247-4 | |
| Vgs (Max) | +22V, -10V | |
| Power Dissipation (Max) | 388W (Tc) | |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 30A, 18V | |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1969 pF @ 800 V |
Goods in stock:1838
Can be shipped immediately
Tube
| quantity | unit price | price |
|---|---|---|
| 1 | $19.44 | $19.44 |
| 10 | $15.45 | $154.5 |
| 30 | $14.29 | $428.7 |
| 120 | $13.25 | $1590 |
| 270 | $12.8 | $3456 |
| 510 | $12.52 | $6385.2 |
