SCTWA50N120

Part Number
SCTWA50N120
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 65A HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Vgs(th) (Max) @ Id 3V @ 1mA
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Supplier Device Package HiP247™
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V
Power Dissipation (Max) 318W (Tc)

Goods in stock:1924

Can be shipped immediately
quantity unit price price
1 USD $31.10 USD $31.10
Total Amount: USD $31.10

Tube

quantity unit price price
1 $31.1 $31.1
10 $25.09 $250.9
25 $23.59 $589.75
100 $21.94 $2194
250 $21.15 $5287.5