SCTWA30N120

Part Number
SCTWA30N120
Manufacturer STMicroelectronics
Other part numbers
Description IC POWER MOSFET 1200V HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Power Dissipation (Max) 270W (Tc)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V
Supplier Device Package HiP247™ Long Leads
Vgs(th) (Max) @ Id 3.5V @ 1mA (Typ)

Goods in stock:1894

Can be shipped immediately
quantity unit price price
1 USD $27.71 USD $27.71
Total Amount: USD $27.71

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quantity unit price price
1 $27.71 $27.71
10 $22.28 $222.8
30 $20.69 $620.7
120 $19.27 $2312.4
270 $18.67 $5040.9
510 $18.28 $9322.8