SCTWA20N120

Part Number
SCTWA20N120
Manufacturer STMicroelectronics
Other part numbers
Description IC POWER MOSFET 1200V HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Power Dissipation (Max) 175W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
Supplier Device Package HiP247™ Long Leads
Rds On (Max) @ Id, Vgs 239mOhm @ 10A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA (Typ)

Goods in stock:2126

Can be shipped immediately
quantity unit price price
1 USD $15.47 USD $15.47
Total Amount: USD $15.47

Tube

quantity unit price price
1 $15.47 $15.47
10 $12.2 $122
30 $11.25 $337.5
120 $10.39 $1246.8
270 $10.03 $2708.1
510 $9.8 $4998
1020 $9.59 $9781.8