SCTWA10N120
| Part Number |
SCTWA10N120
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | IC POWER MOSFET 1200V HIP247 |
| Specification document | Datasheet |
Product attributes
| Part Status | Obsolete | |
|---|---|---|
| Mounting Type | Through Hole | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Package / Case | TO-247-3 | |
| Power Dissipation (Max) | 110W (Tc) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Technology | SiCFET (Silicon Carbide) | |
| Vgs (Max) | +25V, -10V | |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 6A, 20V | |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA (Typ) | |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 1000 V | |
| Supplier Device Package | HiP247™ Long Leads |
Goods in stock:2099
Can be shipped immediately
Tube
| quantity | unit price | price |
|---|---|---|
| 1 | $10.87 | $10.87 |
| 10 | $8.52 | $85.2 |
| 30 | $7.83 | $234.9 |
| 120 | $7.22 | $866.4 |
| 270 | $7.15 | $1930.5 |
