SCTW70N120G2V

Part Number
SCTW70N120G2V
Manufacturer STMicroelectronics
Other part numbers
Description TRANS SJT N-CH 1200V 91A HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 91A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Technology SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On) 18V
Supplier Device Package HiP247™
Vgs (Max) +22V, -10V
Rds On (Max) @ Id, Vgs 30mOhm @ 50A, 18V
Vgs(th) (Max) @ Id 4.9V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 3540 pF @ 800 V
Power Dissipation (Max) 547W (Tc)

Goods in stock:2028

Can be shipped immediately
quantity unit price price
1 USD $35.81 USD $35.81
Total Amount: USD $35.81

Tube

quantity unit price price
1 $35.81 $35.81
30 $23.48 $704.4
120 $23.02 $2762.4