SCTW60N120G2

Part Number
SCTW60N120G2
Manufacturer STMicroelectronics
Other part numbers
Description DISCRETE
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Vgs(th) (Max) @ Id 5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 18V
Supplier Device Package HiP247™
Rds On (Max) @ Id, Vgs 52mOhm @ 30A, 18V
Input Capacitance (Ciss) (Max) @ Vds 1969 pF @ 800 V
Vgs (Max) +18V, -5V
Gate Charge (Qg) (Max) @ Vgs 94 nC @ 8 V
Power Dissipation (Max) 389W (Tc)

Goods in stock:2199

Can be shipped immediately
quantity unit price price
1 USD $20.38 USD $20.38
Total Amount: USD $20.38

Bulk

quantity unit price price
1 $20.38 $20.38
10 $14.53 $145.3
100 $11.27 $1127