SCTW40N120G2VAG

Part Number
SCTW40N120G2VAG
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 33A HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade Automotive
Qualification AEC-Q101
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 290W (Tc)
Technology SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On) 18V
Supplier Device Package HiP247™
Vgs (Max) +22V, -10V
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V

Goods in stock:2110

Can be shipped immediately
quantity unit price price
1 USD $18.92 USD $18.92
Total Amount: USD $18.92

Tube

quantity unit price price
1 $18.92 $18.92
30 $11.73 $351.9
120 $10.27 $1232.4