SCTW35N65G2V
| Part Number |
SCTW35N65G2V
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SICFET N-CH 650V 45A HIP247 |
| Specification document | Datasheet |
Product attributes
| Mounting Type | Through Hole | |
|---|---|---|
| Part Status | Active | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | Automotive | |
| Qualification | AEC-Q101 | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Package / Case | TO-247-3 | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) | |
| Power Dissipation (Max) | 240W (Tc) | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | HiP247™ | |
| Vgs (Max) | +22V, -10V | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V | |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 20A, 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 73 nC @ 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 400 V |
Goods in stock:1600
Can be shipped immediately
Tube
| quantity | unit price | price |
|---|---|---|
| 1 | $15.6 | $15.6 |
| 30 | $9.51 | $285.3 |
| 120 | $8.17 | $980.4 |
| 510 | $7.98 | $4069.8 |
