SCTW100N65G2AG
| Part Number |
SCTW100N65G2AG
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SICFET N-CH 650V 100A HIP247 |
| Specification document | Datasheet |
Product attributes
| Mounting Type | Through Hole | |
|---|---|---|
| Part Status | Active | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | Automotive | |
| Qualification | AEC-Q101 | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Package / Case | TO-247-3 | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) | |
| Vgs(th) (Max) @ Id | 5V @ 5mA | |
| Technology | SiCFET (Silicon Carbide) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Supplier Device Package | HiP247™ | |
| Vgs (Max) | +22V, -10V | |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 50A, 18V | |
| Gate Charge (Qg) (Max) @ Vgs | 162 nC @ 18 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3315 pF @ 520 V | |
| Power Dissipation (Max) | 420W (Tc) |
Goods in stock:2091
Can be shipped immediately
Tube
| quantity | unit price | price |
|---|---|---|
| 1 | $29.77 | $29.77 |
| 30 | $25.01 | $750.3 |
| 120 | $24.75 | $2970 |
