SCTL90N65G2V
| Part Number |
SCTL90N65G2V
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SILICON CARBIDE POWER MOSFET 650 |
| Specification document | Datasheet |
Product attributes
| Part Status | Active | |
|---|---|---|
| Mounting Type | Surface Mount | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | |
| Vgs(th) (Max) @ Id | 5V @ 1mA | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Power Dissipation (Max) | 935W (Tc) | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | PowerFlat™ (8x8) HV | |
| Package / Case | 4-PowerVDFN | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Vgs (Max) | +22V, -10V | |
| Gate Charge (Qg) (Max) @ Vgs | 157 nC @ 18 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 3380 pF @ 400 V | |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 40A, 18V |
Goods in stock:4599
Can be shipped immediately
Cut Tape (CT)
| quantity | unit price | price |
|---|---|---|
| 1 | $32.08 | $32.08 |
| 10 | $26.1 | $261 |
