SCTL35N65G2V

Part Number
SCTL35N65G2V
Manufacturer STMicroelectronics
Other part numbers
Description TRANS SJT N-CH 650V PWRFLAT HV
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 417W (Tc)
Technology SiCFET (Silicon Carbide)
Supplier Device Package PowerFlat™ (8x8) HV
Package / Case 4-PowerVDFN
Vgs (Max) +22V, -10V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V

Goods in stock:7479

Can be shipped immediately
quantity unit price price
1 USD $17.62 USD $17.62
Total Amount: USD $17.62

Cut Tape (CT)

quantity unit price price
1 $17.62 $17.62
10 $12.46 $124.6
100 $11.44 $1144