SCTH90N65G2V-7

Part Number
SCTH90N65G2V-7
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 650V 90A H2PAK-7
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 330W (Tc)
Technology SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs (Max) +22V, -10V
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 400 V
Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
Supplier Device Package H2PAK-7

Goods in stock:1713

Can be shipped immediately
quantity unit price price
1 USD $30.13 USD $30.13
Total Amount: USD $30.13

Cut Tape (CT)

quantity unit price price
1 $30.13 $30.13
10 $28.24 $282.4
100 $22.85 $2285