SCTH40N120G2V7AG

Part Number
SCTH40N120G2V7AG
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 33A H2PAK-7
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Vgs(th) (Max) @ Id 5V @ 1mA
Power Dissipation (Max) 250W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Technology SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs (Max) +22V, -10V
Supplier Device Package H2PAK-7
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 18 V
Rds On (Max) @ Id, Vgs 105mOhm @ 20A, 18V
Input Capacitance (Ciss) (Max) @ Vds 1230 pF @ 800 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
1 USD $18.83 USD $18.83
Total Amount: USD $18.83

Cut Tape (CT)

quantity unit price price
1 $18.83 $18.83
10 $13.37 $133.7
100 $12.46 $1246