SCTH40N120G2V-7
| Part Number |
SCTH40N120G2V-7
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SILICON CARBIDE POWER MOSFET 120 |
| Specification document | Datasheet |
Product attributes
| Part Status | Active | |
|---|---|---|
| Mounting Type | Surface Mount | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Current - Continuous Drain (Id) @ 25°C | 36A (Tc) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Technology | SiCFET (Silicon Carbide) | |
| Power Dissipation (Max) | 238W (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 18V | |
| Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 18 V | |
| Vgs (Max) | +22V, -10V | |
| Supplier Device Package | H2PAK-7 | |
| Vgs(th) (Max) @ Id | 4.9V @ 1mA | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 20A, 18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1233 pF @ 800 V |
Goods in stock:1600
Can be shipped immediately
Cut Tape (CT)
| quantity | unit price | price |
|---|---|---|
| 1 | $18.23 | $18.23 |
| 10 | $12.91 | $129.1 |
| 100 | $11.95 | $1195 |
