SCTH35N65G2V-7AG

Part Number
SCTH35N65G2V-7AG
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 650V 45A H2PAK-7
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Vgs(th) (Max) @ Id 5V @ 1mA
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Power Dissipation (Max) 208W (Tc)
Technology SiCFET (Silicon Carbide)
Vgs (Max) +22V, -10V
Supplier Device Package H2PAK-7
Drive Voltage (Max Rds On, Min Rds On) 18V, 20V
Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V

Goods in stock:2500

Can be shipped immediately
quantity unit price price
1 USD $14.42 USD $14.42
Total Amount: USD $14.42

Cut Tape (CT)

quantity unit price price
1 $14.42 $14.42
10 $10.63 $106.3
100 $9.44 $944