SCTH100N65G2-7AG

Part Number
SCTH100N65G2-7AG
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 650V 95A H2PAK-7
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Package / Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Power Dissipation (Max) 360W (Tc)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 95A (Tc)
Vgs(th) (Max) @ Id 5V @ 5mA
Technology SiCFET (Silicon Carbide)
Drive Voltage (Max Rds On, Min Rds On) 18V
Vgs (Max) +22V, -10V
Rds On (Max) @ Id, Vgs 26mOhm @ 50A, 18V
Supplier Device Package H2PAK-7
Gate Charge (Qg) (Max) @ Vgs 162 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 3315 pF @ 520 V

Goods in stock:2130

Can be shipped immediately
quantity unit price price
1 USD $31.85 USD $31.85
Total Amount: USD $31.85

Cut Tape (CT)

quantity unit price price
1 $31.85 $31.85
10 $24.32 $243.2