SCT50N120

Part Number
SCT50N120
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 65A HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Vgs(th) (Max) @ Id 3V @ 1mA
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Supplier Device Package HiP247™
Rds On (Max) @ Id, Vgs 69mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 400 V
Power Dissipation (Max) 318W (Tc)

Goods in stock:1895

Can be shipped immediately
quantity unit price price
1 USD $30.17 USD $30.17
Total Amount: USD $30.17

Tube

quantity unit price price
1 $30.17 $30.17
30 $19.49 $584.7
120 $18.56 $2227.2