SCT30N120

Part Number
SCT30N120
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 40A HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Power Dissipation (Max) 270W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 2.6V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 400 V
Supplier Device Package HiP247™

Goods in stock:1923

Can be shipped immediately
quantity unit price price
1 USD $25.05 USD $25.05
Total Amount: USD $25.05

Tube

quantity unit price price
1 $25.05 $25.05
30 $15.92 $477.6
120 $14.66 $1759.2