SCT20N120H

Part Number
SCT20N120H
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 20A H2PAK-2
Specification document Datasheet

Product attributes

Part Status Active
Mounting Type Surface Mount
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Vgs(th) (Max) @ Id 3.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Power Dissipation (Max) 175W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Supplier Device Package H2PAK-2
Vgs (Max) +25V, -10V
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V

Goods in stock:1615

Can be shipped immediately
quantity unit price price
1 USD $10.19 USD $10.19
Total Amount: USD $10.19

Cut Tape (CT)

quantity unit price price
1 $10.19 $10.19
10 $7.93 $79.3
25 $7.36 $184
100 $6.74 $674
250 $6.45 $1612.5
500 $6.27 $3135