SCT20N120AG

Part Number
SCT20N120AG
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 20A HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade Automotive
Qualification AEC-Q101
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Vgs(th) (Max) @ Id 3.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 153W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Supplier Device Package HiP247™
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V
Rds On (Max) @ Id, Vgs 239mOhm @ 10A, 20V

Goods in stock:1623

Can be shipped immediately
quantity unit price price
1 USD $17.28 USD $17.28
Total Amount: USD $17.28

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quantity unit price price
1 $17.28 $17.28
30 $12.85 $385.5
120 $12.64 $1516.8