SCT20N120

Part Number
SCT20N120
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 20A HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Vgs(th) (Max) @ Id 3.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Power Dissipation (Max) 175W (Tc)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Supplier Device Package HiP247™
Rds On (Max) @ Id, Vgs 290mOhm @ 10A, 20V
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 400 V

Goods in stock:2184

Can be shipped immediately
quantity unit price price
1 USD $13.48 USD $13.48
Total Amount: USD $13.48

Tube

quantity unit price price
1 $13.48 $13.48
30 $8.11 $243.3
120 $6.97 $836.4
510 $6.92 $3529.2