SCT10N120H
| Part Number |
SCT10N120H
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SICFET N-CH 1200V 12A H2PAK-2 |
| Specification document |
Product attributes
| Part Status | Obsolete | |
|---|---|---|
| Mounting Type | Surface Mount | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | |
| Power Dissipation (Max) | 150W (Tc) | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Drive Voltage (Max Rds On, Min Rds On) | 20V | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | H2PAK-2 | |
| Vgs (Max) | +25V, -10V | |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 6A, 20V | |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 20 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 400 V |
Goods in stock:1600
Can be shipped immediately
