SCT10N120AG

Part Number
SCT10N120AG
Manufacturer STMicroelectronics
Other part numbers
Description SICFET N-CH 1200V 12A HIP247
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade Automotive
Qualification AEC-Q101
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Power Dissipation (Max) 150W (Tc)
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Vgs(th) (Max) @ Id 3.5V @ 250µA
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Vgs (Max) +25V, -10V
Supplier Device Package HiP247™
Rds On (Max) @ Id, Vgs 690mOhm @ 6A, 20V
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 400 V

Goods in stock:2137

Can be shipped immediately
quantity unit price price
1 USD $10.12 USD $10.12
Total Amount: USD $10.12

Tube

quantity unit price price
1 $10.12 $10.12
30 $5.17 $155.1
120 $4.93 $591.6
510 $4.54 $2315.4