SCT1000N170

Part Number
SCT1000N170
Manufacturer STMicroelectronics
Other part numbers
Description HIP247 IN LINE
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade -
Qualification -
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Vgs(th) (Max) @ Id 3.5V @ 1mA
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Power Dissipation (Max) 96W (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Supplier Device Package HiP247™
Rds On (Max) @ Id, Vgs 1.3Ohm @ 3A, 20V
Gate Charge (Qg) (Max) @ Vgs 13.3 nC @ 20 V
Vgs (Max) +22V, -10V
Input Capacitance (Ciss) (Max) @ Vds 133 pF @ 1000 V

Goods in stock:1867

Can be shipped immediately
quantity unit price price
1 USD $9.77 USD $9.77
Total Amount: USD $9.77

Tube

quantity unit price price
1 $9.77 $9.77
10 $6.68 $66.8
100 $4.93 $493
600 $4.33 $2598