SCT070W120G3AG

Part Number
SCT070W120G3AG
Manufacturer STMicroelectronics
Other part numbers
Description SIC MOSFET
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade Automotive
Qualification AEC-Q101
Operating Temperature -55°C ~ 200°C (TJ)
Package / Case TO-247-3
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drain to Source Voltage (Vdss) 1200 V
Power Dissipation (Max) 236W (Tc)
Technology SiC (Silicon Carbide Junction Transistor)
Supplier Device Package HiP247™
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 18 V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Vgs (Max) +18V, -5V
Rds On (Max) @ Id, Vgs 87mOhm @ 15A, 18V
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 850 V

Goods in stock:1600

Can be shipped immediately
quantity unit price price
600 USD $7.33 USD $4,398.00
Total Amount: USD $4,398.00

Bulk

quantity unit price price
600 $7.33 $4398