SCT070H120G3-7
| Part Number |
SCT070H120G3-7
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SILICON CARBIDE POWER MOSFET 120 |
| Specification document | Datasheet |
Product attributes
| Part Status | Active | |
|---|---|---|
| Mounting Type | Surface Mount | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Grade | - | |
| Qualification | - | |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Power Dissipation (Max) | 223W (Tc) | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | H2PAK-7 | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA | |
| Vgs (Max) | +18V, -5V | |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 15A, 18V | |
| Gate Charge (Qg) (Max) @ Vgs | 37.0 | |
| Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs | 18.0 | |
| Input Capacitance (Ciss) (Max) @ Vds | 900.0 | |
| Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds | 850.0 |
Goods in stock:1600
Can be shipped immediately
Cut Tape (CT)
| quantity | unit price | price |
|---|---|---|
| 1 | $13.9 | $13.9 |
| 10 | $9.69 | $96.9 |
| 100 | $8.41 | $841 |
