SCT055TO65G3
| Part Number |
SCT055TO65G3
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SILICON CARBIDE POWER MOSFET 650 |
| Specification document | Datasheet |
Product attributes
| Part Status | Active | |
|---|---|---|
| Mounting Type | Surface Mount | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
| Operating Temperature | -65°C ~ 175°C (TJ) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Technology | SiCFET (Silicon Carbide) | |
| Power Dissipation (Max) | 234W (Tc) | |
| Package / Case | 8-PowerSFN | |
| Supplier Device Package | TOLL (HV) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 18 V | |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA | |
| Vgs (Max) | +18V, -5V | |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 15A, 18V | |
| Input Capacitance (Ciss) (Max) @ Vds | 687 pF @ 400 V |
Goods in stock:1684
Can be shipped immediately
Cut Tape (CT)
| quantity | unit price | price |
|---|---|---|
| 1 | $9.42 | $9.42 |
| 10 | $6.43 | $64.3 |
| 100 | $5.05 | $505 |
