SCT040W65G3-4AG

Part Number
SCT040W65G3-4AG
Manufacturer STMicroelectronics
Other part numbers
Description AUTOMOTIVE-GRADE SILICON CARBIDE
Specification document Datasheet

Product attributes

Mounting Type Through Hole
Part Status Active
FET Type N-Channel
FET Feature -
Grade Automotive
Qualification AEC-Q101
Operating Temperature -55°C ~ 200°C (TJ)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 240W (Tc)
Package / Case TO-247-4
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-247-4
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Vgs(th) (Max) @ Id 4.2V @ 1mA
Vgs (Max) +18V, -5V
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 400 V

Goods in stock:1629

Can be shipped immediately
quantity unit price price
1 USD $14.42 USD $14.42
Total Amount: USD $14.42

Tube

quantity unit price price
1 $14.42 $14.42
30 $9.45 $283.5
120 $8.66 $1039.2