SCT040W65G3-4
| Part Number |
SCT040W65G3-4
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SILICON CARBIDE POWER MOSFET 650 |
| Specification document | Datasheet |
Product attributes
| Mounting Type | Through Hole | |
|---|---|---|
| Part Status | Active | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) | |
| Drain to Source Voltage (Vdss) | 650 V | |
| Power Dissipation (Max) | 240W (Tc) | |
| Package / Case | TO-247-4 | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | TO-247-4 | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Vgs(th) (Max) @ Id | 4.2V @ 1mA | |
| Vgs (Max) | +18V, -5V | |
| Gate Charge (Qg) (Max) @ Vgs | 37.5 nC @ 18 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 400 V |
Goods in stock:1677
Can be shipped immediately
Tube
| quantity | unit price | price |
|---|---|---|
| 1 | $13.57 | $13.57 |
| 30 | $9.47 | $284.1 |
| 120 | $8.25 | $990 |
| 510 | $6.66 | $3396.6 |
