SCT040W120G3-4
| Part Number |
SCT040W120G3-4
|
|---|---|
| Manufacturer | STMicroelectronics |
| Other part numbers | |
| Description | SILICON CARBIDE POWER MOSFET 120 |
| Specification document | Datasheet |
Product attributes
| Mounting Type | Through Hole | |
|---|---|---|
| Part Status | Active | |
| FET Type | N-Channel | |
| FET Feature | - | |
| Grade | - | |
| Qualification | - | |
| Operating Temperature | -55°C ~ 200°C (TJ) | |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Power Dissipation (Max) | 312W (Tc) | |
| Package / Case | TO-247-4 | |
| Technology | SiCFET (Silicon Carbide) | |
| Supplier Device Package | TO-247-4 | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Vgs (Max) | +18V, -5V | |
| Vgs(th) (Max) @ Id | 4.2V @ 5mA | |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 16A, 18V | |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 18 V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1329 pF @ 800 V |
Goods in stock:1600
Can be shipped immediately
Tube
| quantity | unit price | price |
|---|---|---|
| 1 | $17.33 | $17.33 |
| 30 | $10.66 | $319.8 |
| 120 | $9.2 | $1104 |
| 510 | $9.14 | $4661.4 |
